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parameter typ. max. units r ja maximum junction-to-ambient 75 100
hexfet power mosfet thermal resistance v dss = -12v r ds(on) = 0.05 ? ultra low on-resistance p-channel mosfet sot-23 footprint low profile (<1.1mm) available in tape and reel fast switching 1.8v gate rated lead-free halogen-free 07/22/08 www.irf.com 1 parameter max. units v ds drain- source voltage -12 v i d @ t a = 25c continuous drain current, v gs @ -4.5v -4.3 i d @ t a = 70c continuous drain current, v gs @ -4.5v -3.4 a i dm pulsed drain current -34 p d @t a = 25c power dissipation 1.3 p d @t a = 70c power dissipation 0.8 linear derating factor 0.01 w/c e as single pulse avalanche energy 33 mj v gs gate-to-source voltage 8.0 v t j, t stg junction and storage temperature range -55 to + 150 c
these p-channel mosfets from international rectifierutilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet ? power mosfets are well known for, provides the designer with an extremely efficient and reliable devicefor use in battery and load management. a thermally enhanced large pad leadframe has been incorporated into the standard sot-23 package to produce a hexfet power mosfet with the industry's smallest footprint. this package, dubbed the micro3 ? , is ideal for applications where printed circuit board space is at apremium. the low profile (<1.1mm) of the micro3 allows it to fit easily into extremely thin application environments such as portable electronics and pcmcia cards. the thermal resistance and power dissipation are the best available. micro3 ? downloaded from: http:///

2 www.irf.com parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC -1.2 v t j = 25c, i s = -1.3a, v gs = 0v t rr reverse recovery time CCC 22 33 ns t j = 25c, i f = -1.3a q rr reverse recoverycharge CCC 8.0 12 nc di/dt = -100a/s repetitive rating; pulse width limited by max. junction temperature. pulse width 300s; duty cycle 2%. source-drain ratings and characteristics -1.3 -34 s d g
! " starting t j = 25c, l = 3.5mh r g = 25 ? , i as = -4.3a. parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -12 CCC CCC v v gs = 0v, i d = -250a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC -0.007 CCC v/c reference to 25c, i d = -1ma CCC CCC 0.050 v gs = -4.5v, i d = -4.3a r ds(on) static drain-to-source on-resistance ### CCC 0.085 v gs = -2.5v, i d = -2.5a ### CCC 0.125 v gs = -1.8v, i d = -2.0a v gs(th) gate threshold voltage -0.40 -0.55 -0.95 v v ds = v gs , i d = -250a g fs forward transconductance 8.6 CCC CCC s v ds = -10v, i d = -4.3a CCC CCC -1.0 v ds = -12v, v gs = 0v CCC CCC -25 v ds = -9.6v, v gs = 0v, t j = 55c gate-to-source forward leakage CCC CCC -100 v gs = -8.0v gate-to-source reverse leakage CCC CCC 100 v gs = 8.0v q g total gate charge CCC 10 15 i d = -4.3a q gs gate-to-source charge CCC 1.4 2.1 nc v ds = -10v q gd gate-to-drain ("miller") charge CCC 2.6 3.9 v gs = -5.0v t d(on) turn-on delay time CCC 11 CCC v dd = -6.0v t r rise time CCC 32 CCC i d = -1.0a t d(off) turn-off delay time CCC 250 CCC r d = 6.0 ? t f fall time CCC 210 CCC r g = 89 ? c iss input capacitance CCC 830 CCC v gs = 0v c oss output capacitance CCC 180 CCC pf v ds = -10v c rss reverse transfer capacitance CCC 125 CCC ? = 1.0mhz electrical characteristics @ t j = 25c (unless otherwise specified) $ a ? i dss drain-to-source leakage current na ns downloaded from: http:///

www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) -1.0v 20s pulse width tj = 150c vgs top -7.0v -5.0v -4.5v -3.0v -2.5v -1.8v -1.5v bottom -1.0v 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -v gs , gate-to-source voltage (v) 0.1 1.0 10.0 100.0 - i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = -12v 20s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -4.5v -4.3a 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) -1.0v 20s pulse width tj = 25c vgs top -7.0v -5.0v -4.5v -3.0v -2.5v - 1.8v -1.5v bottom -1.0v downloaded from: http:///

4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.1 1 10 100 1000 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 1 10 100 v ds , drain-to-source voltage (v) 0 200 400 600 800 1000 1200 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0.1 1 10 100 0.2 0.6 1.0 1.4 1.8 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0 4 8 12 16 0 2 4 6 8 10 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs i = d -4.3a v = -10v ds downloaded from: http:///

www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature fig 10. maximum avalanche energy vs. drain current 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 5.0 t , case temperature ( c) -i , drain current (a) c d 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 20 40 60 80 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -1.9a -3.4a -4.3a downloaded from: http:///

6 www.irf.com fig 13. typical on-resistance vs. drain current fig 12. typical on-resistance vs. gate voltage 0 1 02 03 04 0 -i d , drain current ( a ) 0.00 0.05 0.10 0.15 0.20 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) vgs = -4.5v vgs = -2.5v vgs = -1.8v fig 14. typical threshold voltage vs. junction temperature -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.3 0.4 0.5 0.6 0.7 0.8 - v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = -250a 1.0 2.0 3.0 4.0 5.0 6.0 7.0 -v gs, gate -to -source voltage ( v ) 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 r d s ( o n ) , d r a i n - t o - s o u r c e v o l t a g e ( ? ) id = -4.3a downloaded from: http:///

www.irf.com 7 micro3 / sot-23 package marking a yw lc part number y = year w = week lot code halogen free indicator part number code reference: a = irlml2402 b =irlml2803 c = irlml2402 d = irlml5103 e = irlml6402 f = irlml6401 g = irlml2502 h = irlml5203 note: a line above the work week (as shown here) indicates lead-free micro3 (sot-23 / to-236ab) part marking informationnote: for the most current drawing please refer to ir website at http://www.irf.com/package

!" #
$ ! " 0.972 1.900 recommended footprint 0.802 0.950 2.742

e e1 e d a b 0.15 [0.006] e1 1 2 3 m cba 5 6 6 5 3x l c b a1 3x a a2 abc m 0.20 [0.008] 0.10 [0.004] c c l2 h 4 l1 7 0.89 1.12 symbol max min a1 b 0.01 0.10 c 0.30 0.50 d 0.08 0.20 e 2.80 3.04 e1 2.10 2.64 e 1.20 1.40 a 0.95 bsc l0 . 4 00 . 6 0 08 millimeters a2 0.88 1.02 e1 1.90 bsc ref 0.54 l1 bsc 0.25 l2 bsc ref
inches 8 0

0.0004 min max
dimensions notes: 1. dimensioning & tolerancing per ansi y14.5m-1994 2. dimensions are shown in millimeters [inches]. 3. controlling dimension: millimeter. 4. datum plane h is located at the mold parting line. 5. datum a and b to be determined at datum plane h. 6. dimensions d and e1 are measured at datum plane h. dimensions does not include mold protrusions or interlead flash. mold protrusions or interlead flash shall not exceed 0.25 mm [0.010 inch] per side. 7. dimension l is the lead length for soldering to a substrate. 8. outline conforms to jedec outline to-236 ab. downloaded from: http:///

8 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 07/2008 ?

2.05 ( .080 ) 1.95 ( .077 ) tr feed direction 4.1 ( .161 ) 3.9 ( .154 ) 1.6 ( .062 ) 1.5 ( .060 ) 1.85 ( .072 ) 1.65 ( .065 ) 3.55 ( .139 ) 3.45 ( .136 ) 1.1 ( .043 ) 0.9 ( .036 ) 4.1 ( .161 ) 3.9 ( .154 ) 0.35 ( .013 ) 0.25 ( .010 ) 8.3 ( .326 ) 7.9 ( .312 ) 1.32 ( .051 ) 1.12 ( .045 ) 9.90 ( .390 ) 8.40 ( .331 ) 178.00 ( 7.008 ) max. notes: 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. note: for the most current drawing please refer to ir website at http://www.irf.com/package downloaded from: http:///

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